Care and Handling of Your VAIO Computer Proper Handling Use your computer on a clean dry stable surface Use only specified peripheral equipment and interface cables or you may experience problems W hen your computer is brought directly from a cold location to a warm one moisture may condense inside the computer If this occurs wait at least one hour before turning on the computer If you experience problems G Unplug the computer G Remove the battery pack G Contact
Switching Diodes This product complies with the RoHS Directive EU 2002 95 EC Panasonic MA3S132D MAI 32WA MA3S132E MAI 32WK Silicon epitaxial planar type For switching circuits Features Short reverse recovery time t rr Small terminal capacitance C t Two isolated elements contained in one package allowing high density mounting Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Reverse voltage Vr 80 V Maxi
This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD PsndSOIliC MA3S781D MA781WA MA3S781E MA781WK Silicon epitaxial planar type For high speed switching Features Two MA3S781 MA781 is contained in one package High density mounting is possible Low forward voltage Vp Absolute Maximum Ratings Ta 25 C Parameter Symbol Rating Unit Reverse voltage Vr 30 V Maximum peak reverse voltage RM
This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD Panasonic MA3S795EG Silicon epitaxial planar type For switching For wave detection Features High density mounting is possible Forward voltage Vp optimum for low voltage rectification Vp lt 0 3 V Optimum for high frequency rectification because of its short reverse recovery time t Absolute Maximum Ratings Ta 25 C Parameter Symbol Rating
Switching Diodes This product complies with the RoHS Directive EU 2002 95 EC Panasonic MA3S132A MA132A MA3S132K MA132K Silicon epitaxial planar type For switching circuits Features Short reverse recovery time t rr Small terminal capacitance C t Allowing high density mounting Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Reverse voltage v R 80 V Maximum peak reverse voltage Vrm 80 V Forward current
Hotte aspirante 90 cm OMBRA3SS Manuel d instructions Baumatic Manuel d utilisation Hotte aspirante 90 cm OMBRA3SS ox Baumatic REMARQUE le pr sent manuel d utilisation contient des informations importantes parmi lesquelles des points concernant la s curit et l installation qui vous permettront de tirer le meilleur parti de votre appareil Conservez le en lieu s r afin de pouvoir facilement vous y reporter par la suite vous ou toute person
This product complies with the RoHS Directive EU 2002 95 EC Switching Diodes Panasonic MA3S1370G Silicon epitaxial planar type For high speed switching circuits Features Two isolated elements contained in one package allowing high density mounting Two diodes are connected in series in the package Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Reverse voltage v R 80 V Maximum peak reverse voltage Vrm 80
Switching Diodes This product complies with the RoHS Directive EU 2002 95 EC Panasonic MA3S132D MA132WA MA3S 32E MA132WK Silicon epitaxial planar type For switching circuits Features Short reverse recovery time Cj Small terminal capacitance Two isolated elements contained in one package allowing high density mounting Absolute Maximum Ratings Ta 25 C Parameter Symbol Rating Unit Reverse voltage Vr 80 V Maximum pea
Size 210x340mm Refrigerator Quick Guide imagine the possibilities CUSTOMER SERVICE SUPPORT 1800 3000 8282 TOLL FREE K WVWW SAMSUNG COM IN Thank you for purchasing this Samsung product Sa GAT Vas GH Gtad e few soy sega Download complete manual from www samsung com in support SETTING UP YOUR REFRIGERATOR SNE pP Vita oe After Segall Wait for 2 hours before plug in the Refrigerator R amp oner Hl AT IM Veet 2 Te Teh Wee HE Allow cl
This product complies with the RoHS Directive EU 2002 95 EC Switching Diodes Panasonic MA3S132DG MA3S132EG Silicon epitaxial planar type For switching circuits Features Short reverse recovery time t rr Small terminal capacitance C t Two isolated elements contained in one package allowing high density mounting Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Reverse voltage Vr 80 V Maximum peak reverse voltag
This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD PsndSOIliC MA3SE02 Silicon epitaxial planar type For cellular phone Features High frequency wave detection is possible Low forward voltage Vp Small terminal capacitance C Absolute Maximum Ratings Ta 25 C Parameter Symbol Rating Unit Reverse voltage Vr 20 V Maximum peak reverse voltage RM 20 V Forward current Single Ip 35
ENGLISH HOME THEATER SOUND SYSTEM TH BA3 Consists of SP THBA3F RX THBA3 SP THBA3S and SP THBA3W CD DOLBY cltS pro ldgIc i Digital Surround Thank you for purchasing a JVC product Before operation please read the instructions carefully For customer use Enter below the Model No and Serial No which are located either on the rear bottom or side of the cabinet Retain this information for future reference Model No Serial No INSTRUCTIONS gvto289
This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD Panasonic MA3S7810G Silicon epitaxial planar type For high speed switching For wave detection Features High density mounting is possible Optimum for high frequency rectification because of its short reverse recovery time t rr Low forward voltage V F and good rectification efficiency Package Code SSMini3 F3 Pin Name 1 Anode 2 N C 3
Contents 1 INSTRUCTIONS FOR SAFE AND PROPER USE _ 4 2 INSTALLA TION OF THE APPLIANCE _ 6 3 ADAPTATION TO DIFFERENT TYPES OF GAS _ 12 4 FINAL OPERATIONS _ 14 5 DESCRIPTION OF CONTROLS _ 15 6 USE OF THE COOKING HOB _ 2 1 7 USE OF THE OVENS _ 23 8 ACCESSORIES _ 24 9 COOKING HINTS _ 26 10 CLEANING AND MAINTENANCE _ 34 11 EXTRAORDINARY MAINTENANCE _ 38 12 PROBLEMS AND CAUSES _ 41 INSTRUCTIONS FOR THE INSTALLER these are for the qualified technician
This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD Panasonic MA3S781DG MA3S781 EG Silicon epitaxial planar type For high speed switching For wave detection Features Two MA3S7810G is contained in one package High density mounting is possible Low forward voltage V F Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Reverse voltage v R 30 V Maximum peak reverse voltage Vrm
This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD Panasonic MA3SE01 Silicon epitaxial planar type For cellular phone Features High frequency wave detection is possible Low forward voltage V F Small junction capacitance Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Reverse voltage v R 20 V Maximum peak reverse voltage Vrm 20 V Forward current Single If 35
This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD Panasonic MA3SD29F Silicon epitaxial planar type For super high speed switching circuits Features Low forward voltage V F lt 0 42 V at I F 100 mA Optimum for high frequency rectification Short reverse recovery time C Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Reverse voltage Vr 30 V Repetitive peak reverse
spira Mrs 2 PlISarco V lvulas de aislamiento BSA A3S HV3 y RP Informaci n de seguridad adicional Instrucciones de Instalaci n y Mantenimiento El funcionamiento seguro de estos productos s lo puede garantizarse si la instalaci n puesta en marcha uso y mantenimiento se realiza adecuamente y por personal calificado ver el punto 11 de este documento siguiendo las instrucciones de operaci n Tambi n debe cumplirse con las instrucciones generales de instalaci n y
This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD Panasonic MA3SE020G Silicon epitaxial planar type For cellular phone Features High frequency wave detection is possible Low forward voltage V F Small terminal capacitance C t Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Reverse voltage v R 20 V Maximum peak reverse voltage Vrm 20 V Forward current Single
Switching Diodes This product complies with the RoHS Directive EU 2002 95 EC Panasonic MA3S132A MA132A MA3S132K MA132K Silicon epitaxial planar type For switching circuits Features Short reverse recovery time t rr Small terminal capacitance C t Allowing high density mounting Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Reverse voltage v R 80 V Maximum peak reverse voltage Vrm 80 V Forward current