W0 CYPRESS PRELIMINARY CY14B104K CY14B104M 4 Mbit 512K x 8 256K x 16 nvSRAM with Real Time Clock Features 20 ns 25 ns and 45 ns access times Internally organized as 512K x 8 CY14B104K or 256K x 16 CY14B104M Hands off automatic STORE on power down with only a small capacitor STORE to QuantumTrap nonvolatile elements is initiated by software device pin or AutoStore on powerdown RECALL to SRAM initiated by software or power up High r
CY14B101Q1 CY14B101Q2 CY14B101Q3 y CYPRESS PERFORM PRELIMINARY 1 Mbit 128K x 8 Serial SPI nvSRAM Features 1 Mbit Nonvolatile SRAM Internally organized as 128K x 8 STORE to QuantumTrap nonvolatile elements initiated au tomatically on power down AutoStore or by user using HSB pin Hardware Store or SPI instruction Software Store RECALL to SRAM initiated on power up Power Up Recall or by SPI Instruction Software RECALL Auto
PERFORM CY7C1510JV18 CY7C1525JV18 CY7C1512JV18 CY7C1514JV18 72 Mbit QDR II SRAM 2 Word Burst Architecture Features Separate independent read and write data ports Supports concurrent transactions 267 MHz clock for high bandwidth 2 word burst on all accesses Double Data Rate DDR interfaces on both read and write ports data transferred at 534 MHz at 267 MHz Two input clocks K and K for precise DDR timing SRAM uses rising edges o
BOSQUE 30 1 18 26 2009 Vegetative propagation of patagonian cypress a vulnerable species from the subantarctic forest of South America Propagaci n vegetativa del cipr s de la cordillera una especie vulnerable del bosque subant rtico de Sudam rica Alejandro Aparicio Mario Pastorino Alejandro Martinez Meier Leonardo Gallo Corresponding author Instituto Nacional de Tecnolog a Agropecuaria Unidad de Gen tica Forestal EEA Bariloche CC 277 8400 Bari
y CYPRESS PERFORM CY62138FV30 MoBL 2 Mbit 256K x 8 Static RAM Features Very high speed 45 ns Wide voltage range 2 20V 3 60V Pin compatible with CY62138CV25 30 33 Ultra low standby power Typical standby current 1 pA Maximum standby current 5 pA Ultra low active power Typical active current 1 6 mA f 1 MHz Easy memory expansion with CE CE 2 and OE features Automatic power down when deselected CMOS for
y CYPRESS PERFORM CY7C1370DV25 CY7C1372DV25 18 Mbit 512K x 36 1M x 18 Pipelined SRAM with NoBL Architecture Features Pin compatible and functionally equivalent to ZBT Supports 250 MHz bus operations with zero wait states Available speed grades are 250 200 and 167 MHz Internally self timed output buffer control to eliminate the need to use asynchronous OE Fully registered inputs and outputs for pipelined operation Byte Write cap
Power Management Low Cost Two Cell Li ion Li Pol Battery Charger with Cell Balancing Support AN2309 Author Oleksandr Karpin Associated Project Yes Associated Part Family CY8C24x23A CY8C24794 CY8C27x43 CY8C29x66 GET FREE SAMPLES HERE Software Version PSoC Designer 5 0 SP1 Associated Application Notes AN2107 AN2258 AN2267 AN2294 PSoC Application Notes Index Application Note Abstract This application note describes a low cost two cell Li ion Li Pol bat
STK12C68 64 Kbit 8K x 8 AutoStore nvSRAM Features 25 ns 35 ns and 45 ns access times Hands off automatic STORE on power down with external 68 pF capacitor STORE to QuantumTrap nonvolatile elements is initiated by software hardware or AutoStore on power down RECALL to SRAM initiated by software or power up Unlimited Read Write and Recall cycles 1 000 000 STORE cycles to OuantumTrap too year data retention to OuantumTrap
CY7C1380D CY7C1382D _ _ CYPRESS CY7C1380F CY7C1382F 18 Mbit 512K x 36 1M x 18 Pipelined SRAM Features Supports bus operation up to 250 MHz Available speed grades are 250 200 and 167 MHz Registered inputs and outputs for pipelined operation 3 3V core power supply 2 5V or 3 3V I O power supply Fast clock to output times 2 6 ns for 250 MHz device Provides high performance 3 1 1 1 access rate User selectable burst coun
CYPRESS PERFORM CY62157ESL MoBL 8 Mbit 512K x 16 Static RAM Features Very high speed 45 ns Wide voltage range 2 2V 3 6V and 4 5V 5 5V Ultra low standby power Typical Standby current 2 pA Maximum Standby current 8 pA Ultra low active power Typical active current 1 8 mA at f 1 MHz Easy memory expansion with CE and OE features Automatic power down when deselected CMOS for optimum speed and power Available
PERFORM CY7C67200 EZ OTG Programmable USB On The Go Host Peripheral Controller EZ OTG Features m Single chip programmable USB dual role Host Peripheral controller with two configurable Serial Interface Engines SIEs and two USB ports m Supports USB OTG protocol m On chip 48 MHz 16 bit processor with dynamically switchable clock speed m Configurable IO block supports a variety of IO options or up to 25 bits of General Purpose IO GPIO m 4K x 16 internal
CY7C1305BV25 CY7C1307BV25 PERFORM 18 Mbit Burst of 4 Pipelined SRAM with QDR Architecture CYPRESS Features Separate independent Read and Write data ports Supports concurrent transactions 167 MHz clock for high bandwidth 2 5 ns Clock to Valid access time 4 Word Burst for reducing the address bus frequency Double Data Rate DDR interfaces on both Read and Write Ports data transferred at 333 MHz 167 MHz Two input clocks K and
m I KAD FRKF kJ CY7C0837AV CY7C0830AV CY7C0831 AV CY7C0832AV CY7C0832BV CY7C0833AV FLEx18 3 3V 64K 128K x 36 and 128K 256Kx 18 Synchronous Dual Port RAM Features True Dual Ported Memory Cells that Allow Simultaneous Access of the Same Memory Location Synchronous Pipelined Operation Family of 512 Kbit 1 Mbit 2 Mbit 4 Mbit and 9 Mbit Devices Pipelined Output Mode Allows Fast Operation 0 18 micron CMOS for Optimum Speed and Power
CY7C1470V33 CY7C1472V33 CY7C1474V33 F CYPRESS PERFORM 72 Mbit 2M x 36 4M x 18 1M x 72 Pipelined SRAM with NoBL Architecture Features Pin compatible and functionally equivalent to ZBT Supports 250 MHz bus operations with zero wait states Available speed grades are 250 200 and 167 MHz Internally self timed output buffer control to eliminate the need to use asynchronous OE Fully registered inputs and outputs for pipelined operati
CY7C65113C CYPRESS PERFORM USB Hub with Microcontroller USB Hub with Microcontroller Cypress Semiconductor Corporation Document 38 08002 Rev D 198 Champion Court San Jose CA 95134 1709 408 943 2600 Revised March 6 2006 Feedback CYPRESS _ CY7C65113C PERFORM TABLE OF CONTENTS I 0 FEATURES 5 2 0 FUNCTIONAL OVERVIEW 6 3 0 PIN CONFIGURATIONS 8 4 0 PRODUCT SUMMARY TABLES 8 4 1 Pin Assignments 8 4 2 I O Register S
CY7C1318CV18 CY7C1320CV18 CYPRESS PERFORM 18 Mbit DDR II SRAM 2 Word Burst Architecture Features 18 Mbit Density 1M x 18 512Kx 36 267 MHz Clock for high Bandwidth 2 word Burst for reducing Address Bus Frequency Double Data Rate DDR Interfaces data transferred at 534 MHz at 267 MHz Two Input Clocks K and K for precise DDR Timing o SRAM uses rising edges only Two Input Clocks for Output Data C and C to minimize Clock Skew and Fl
PERFORM CY7C64215 enCoRe III Full Speed USB Controller Features Powerful Harvard Architecture Processor M8C Processor Speeds to 24 MHz Two 8x8 Multiply 32 bit Accumulate 3 0V to 5 25V Operating Voltage USB 2 0 USB IF certified TID 40000110 Operating Temperature Range 0 C to 70 C Additional System Resources I 2 C Slave Master and Multi Master to 400 kHz Watchdog and Sleep Timers User Configurable Low Voltag
CY7C1386DV25 CY7C1386FV25 CY7C1387DV25 CY7C1387FV25 y CYPRESS PERFORM 18 Mbit 512K x 36 1M x 18 Pipelined DCD Sync SRAM Features Supports bus operation up to 250 MHz Available speed grades are 250 200 and 167 MHz Registered inputs and outputs for pipelined operation Optimal for performance Double Cycle deselect Depth expansion without wait state 2 5V 5 power supply V DD Fast clock to output times 2 6 ns for 250 MHz devic
CY7C1161V18 CY7C1176V18 CY7C1163V18 CY7C1165V18 y CYPRESS PERFORM 18 Mbit QDR II SRAM 4 Word Burst Architecture 2 5 Cycle Read Latency Features Separate independent read and write data ports Supports concurrent transactions 300 MHz to 400 MHz clock for high bandwidth 4 word burst to reduce address bus frequency Double Data Rate DDR interfaces on both read and write ports data transferred at 800 MHz at 400 MHz Read latency of 2 5
PERFORM CY7C1416AV18 CY7C1427AV18 CY7C1418AV18 CY7C1420AV18 36 Mbit DDR II SRAM 2 Word Burst Architecture Features 36 Mbit density 4M x 8 4M x 9 2M x 18 1M x 36 300 MHz clock for high bandwidth 2 word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 600MHz at 300 MHz for DDR II Two input clocks K and K for precise DDR timing SRAM uses rising edges only Two input clocks for output d