Simulating Radiation-Induced Shifts in MOSFET Threshold Voltage

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1. Simulating Radiation-Induced Shifts in MOSFET Threshold Voltage

Simulation Standard Engineered Excellence A Journal for Process and Device Engineers Simulating Radiation Induced Shifts in MOSFET Threshold Voltage Introduction Irradiation by energetic particles can degrade semicon ductor device performance The particles involved can be electrons positrons neutrons protons alpha particles heavy ions or high energy photons As they pass through a device these particles interact with the lattice Energy deposited through
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12. Simulating Radiation-Induced Shifts in MOSFET Threshold Voltage

Simulation Standard Engineered Excellence A Journal for Process and Device Engineers Simulating Radiation Induced Shifts in MOSFET Threshold Voltage Introduction Irradiation by energetic particles can degrade semicon ductor device performance The particles involved can be electrons positrons neutrons protons alpha particles heavy ions or high energy photons As they pass through a device these particles interact with the lattice Energy deposited through
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