Acer Download Tool User Manual v18 01 Date 2015 01 30 Index Note Download tool has 2 kinds of version RD amp CSD LRO gn 5 DNASE OK BESLOOT OU EE 5 J Ae HIS e uge boj oe ado Be te EEE EE EE EN NE EEES 5 2 NTN he 7 DONT ND 10 SERIES 10 EDEN NPE NNN 17 DE NNN er 18 3 4 CSD mode Qualcomm Page Setting 23 SUNNE 244 Sm op ESD mode Mter PSE SCENE NG 36 37 RUMO WINGOW CC SCEE EEE EE tienen ene pneu wade ve sea Bestanden NE 37 e een e EN 41 d CSD error MOBILE anem
ARW INSTALLATION AND OPERATING INSTRUCTIONS Models XWAV1417 XWAV1422 XWAV1829 PASS THROUGH OVEN INTENDED FOR OTHER THAN HOUSEHOLD USE RETAIN THIS MANUAL FOR FUTURE REFERENCE UNIT MUST BE KEPT CLEAR OF COMBUSTIBLES AT ALL TIMES FOR YOUR SAFETY Do not store or use gasoline or other flammable vapors and liquids in the vicinity of this or any other appliance WARNING Improper installation adjustment alteration service or maintenance can cause property dam
1 8 HDMI DISTRIBUTION AMPLIFIER VER 1 9 10 2GBPS AT HD V18S USER MANUAL eco Ti Gers 1 8 1 3 19 2 ER TABLE OF CONTENTS 5 1 EEEE 1 Operation Controls and Functions __ 2 2 32 RGA Fanell 2 4 Connection and Installation _ 3 decemneamaarancssimanaaenmannaceaananaen 3 i i ea
bonaviTA Exceptional Brew 8 cup auto shut off coffee maker Model BV1800 Customer assistant line USA 1 855 664 1252 Thank you for purchasing this Bonavita appliance HOUSEHOLD USE ONLY 2 year limited warranty IMPORTANT SAFEGUARDS When using electrical appliances basic safety precautions should always be followed to prevent the risk of fire electric shock burns or other injuries or damages Read all operating and safety instructions carefully Do not
bonaviTA Exceptional Brew 8 cup thermal carafe coffee maker Model BV1800TH Customer assistant line USA 1 855 664 1252 Thank you for purchasing this Bonavita appliance HOUSEHOLD USE ONLY 2 year limited warranty IMPORTANT SAFEGUARDS When using electrical appliances basic safety precautions should always be followed to prevent the risk of fire electric shock burns or other injuries or damages Read all operating and safety instructions carefully Do
CV185 FOLDING DEEP BASS STEREO HEADPHONES High performance 40mm neodymium driver units deliver deep bass sound Compact folding design for easy carrying and storage Adjustable headband for maximum comfort Gold plated 3 5mm stereo plug Unit Dimensions 5 8 x 7 25 x 2 88 WHD 0 Compact Folding Design COBY www cobyusa com and www ecoby com 2008 COBY ELECTRONICS CORPORATION All Rights Reserved Coby is a trademark of Coby El
V SERIES TUBE AMPLIFIERS V18 112 V18 212 Tube Guitar Amplifier with Reverb Owner s Manual IJIliacilBKIllB 111 M C il V18112 V18 212 Tube tutor Amplifier with Beverfa TABLE OF CONTENTS Introduction 3 The Front Panel 4 The Rear Panel 5 Important Information About Tubes and Tube Products 6 A Brief History of Tubes 6 Tube Types and Usage 6 The Nature of Tubes Why and When to Replace Them 7 The Importance of
V SERIES TUBE AMPLIFIERS V18 112 V18 212 Tube Guitar Amplifier with Reverb Owner s Manual IJIliacilBKIllB 111 M C il V18112 V18 212 Tube tutor Amplifier with Beverfa TABLE OF CONTENTS Introduction 3 The Front Panel 4 The Rear Panel 5 Important Information About Tubes and Tube Products 6 A Brief History of Tubes 6 Tube Types and Usage 6 The Nature of Tubes Why and When to Replace Them 7 The Importance of
CYPRESS CY62147DV18 MoBL2 4 Mb 256K x 16 Static RAM Features Very high speed 55 ns and 70 ns Wide voltage range 1 65V 2 25V Pin compatible with CY62147CV18 Ultra low active power Typical active current 1 mA f 1 MHz Typical active current 6 mA f f max Ultra low standby power ___ Easy memory expansion with CE and OE features Automatic power down when deselected CMOS for optimum speed power Packages
CYPRESS PERFORM Features Very high speed 55 ns Wide voltage range 1 65V 2 25V Pin Compatible with CY62157DV18 and CY62157DV20 Ultra low standby power Typical Standby current 2 pA Maximum Standby current 8 pA Ultra low active power Typical active current 1 8 mA f 1 MHz Easy memory expansion with CE CE 2 and OE features Automatic power down when deselected CMOS for optimum speed and power Available in P
CYPRESS PERFORM CY62167DV18 MoBL 16 Mbit 1M x 16 Static RAM Features Very high speed 55 ns Wide voltage range 1 65V 1 95V Ultra low active power Typical active current 1 5 mA f 1 MHz Typical active current 15 mA f f max Ultra low standby power Easy memory expansion with CE CE 2 and OE features Automatic powerdown when deselected CMOS for optimum speed and power Available in Pb free 48 ball VFBGA pac
PERFORM CY62167EV18 MoBL 16 Mbit 1M x 16 Static RAM Features Very high speed 55 ns Wide voltage range 1 65V to 2 25V Ultra low standby power Typical standby current 1 5 pA Maximum standby current 12 pA Ultra low active power Typical active current 2 2 mA atf 1 MHz Easy memory expansion with CE CE 2 and OE features Automatic power down when deselected CMOS for optimum speed and power Offered in Pb free
E3C CY7C1141VI8 CY7C1156V18 CYPRESS _ CY7C1143V18 CY7C1145V18 18 Mbit QDR II SRAM 4 Word Burst Architecture 2 0 Cycle Read Latency Features Separate Independent read and write data ports Supports concurrent transactions 300 MHz to 375 MHz clock for high bandwidth 4 Word Burst for reducing address bus frequency Double Data Rate DDR interfaces on both read and write ports data transferred at 750 MHz at 375 MHz Read latency of 2 0 clock
E3C CY7C1141VI8 CY7C1156V18 CYPRESS _ CY7C1143V18 CY7C1145V18 18 Mbit QDR II SRAM 4 Word Burst Architecture 2 0 Cycle Read Latency Features Separate Independent read and write data ports Supports concurrent transactions 300 MHz to 375 MHz clock for high bandwidth 4 Word Burst for reducing address bus frequency Double Data Rate DDR interfaces on both read and write ports data transferred at 750 MHz at 375 MHz Read latency of 2 0 clock
E3C CY7C1141VI8 CY7C1156V18 CYPRESS _ CY7C1143V18 CY7C1145V18 18 Mbit QDR II SRAM 4 Word Burst Architecture 2 0 Cycle Read Latency Features Separate Independent read and write data ports Supports concurrent transactions 300 MHz to 375 MHz clock for high bandwidth 4 Word Burst for reducing address bus frequency Double Data Rate DDR interfaces on both read and write ports data transferred at 750 MHz at 375 MHz Read latency of 2 0 clock
CY7C1146V18 CY7C1157V18 CY7C1148V18 CY7C1150V18 y CYPRESS PERFORM 18 Mbit DDR II SRAM 2 Word Burst Architecture 2 0 Cycle Read Latency Features 18 Mbit density 2M x 8 2M x 9 1M x 18 512K x 36 300 MHz to 375 MHz clock for high bandwidth 2 Word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 750 MHz at 375 MHz Read latency of 2 0 clock cycles Two input clocks K and K for precise DDR
CY7C1146V18 CY7C1157V18 CY7C1148V18 CY7C1150V18 y CYPRESS PERFORM 18 Mbit DDR II SRAM 2 Word Burst Architecture 2 0 Cycle Read Latency Features 18 Mbit density 2M x 8 2M x 9 1M x 18 512K x 36 300 MHz to 375 MHz clock for high bandwidth 2 Word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 750 MHz at 375 MHz Read latency of 2 0 clock cycles Two input clocks K and K for precise DDR
CY7C1146V18 CY7C1157V18 CY7C1148V18 CY7C1150V18 y CYPRESS PERFORM 18 Mbit DDR II SRAM 2 Word Burst Architecture 2 0 Cycle Read Latency Features 18 Mbit density 2M x 8 2M x 9 1M x 18 512K x 36 300 MHz to 375 MHz clock for high bandwidth 2 Word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 750 MHz at 375 MHz Read latency of 2 0 clock cycles Two input clocks K and K for precise DDR
E3C CY7C1141VI8 CY7C1156V18 CYPRESS _ CY7C1143V18 CY7C1145V18 18 Mbit QDR II SRAM 4 Word Burst Architecture 2 0 Cycle Read Latency Features Separate Independent read and write data ports Supports concurrent transactions 300 MHz to 375 MHz clock for high bandwidth 4 Word Burst for reducing address bus frequency Double Data Rate DDR interfaces on both read and write ports data transferred at 750 MHz at 375 MHz Read latency of 2 0 clock
CY7C1146V18 CY7C1157V18 CY7C1148V18 CY7C1150V18 CYPRESS PERFORM 18 Mbit DDR II SRAM 2 Word Burst Architecture 2 0 Cycle Read Latency Features 18 Mbit density 2M x 8 2M x 9 1M x 18 512K x 36 300 MHz to 375 MHz ciock for high bandwidth 2 Word burst for reducing address bus frequency Doubie Data Rate DDR interfaces data transferred at 750 MHz at 375 MHz Read iatency of 2 0 ciock cycies Two input ciocks K and K for precise DDR t
CY7C1161V18 CY7C1176V18 CY7C1163V18 CY7C1165V18 y CYPRESS PERFORM 18 Mbit QDR II SRAM 4 Word Burst Architecture 2 5 Cycle Read Latency Features Separate independent read and write data ports Supports concurrent transactions 300 MHz to 400 MHz clock for high bandwidth 4 word burst to reduce address bus frequency Double Data Rate DDR interfaces on both read and write ports data transferred at 800 MHz at 400 MHz Read latency of 2 5
CY7C1161V18 CY7C1176V18 CY7C1163V18 CY7C1165V18 y CYPRESS PERFORM 18 Mbit QDR II SRAM 4 Word Burst Architecture 2 5 Cycle Read Latency Features Separate independent read and write data ports Supports concurrent transactions 300 MHz to 400 MHz clock for high bandwidth 4 word burst to reduce address bus frequency Double Data Rate DDR interfaces on both read and write ports data transferred at 800 MHz at 400 MHz Read latency of 2 5
CY7C1161V18 CY7C1176V18 CY7C1163V18 CY7C1165V18 CYPRESS PERFORM 18 Mbit QDR II SRAM 4 Word Burst Architecture 2 5 Cycle Read Latency Features Separate independent read and write data ports Supports concurrent transactions 300 MHz to 400 MHz ciock for high bandwidth 4 word burst to reduce address bus frequency Doubie Data Rate DDR interfaces on both read and write ports data transferred at 800 MHz at 400 MHz Read iatency of 2 5 c
CY7C1166V18 CY7C1177V18 CY7C1168V18 CY7C1170V18 CYPRESS PERFORM 18 Mbit DDR II SRAM 2 Word Burst Architecture 2 5 Cycle Read Latency Features 18 Mbit density 2M x 8 2M x 9 1M x 18 512K x 36 300 MHz to 400 MHz ciock for high bandwidth 2 Word burst for reducing address bus frequency Doubie Data Rate DDR interfaces data transferred at 800 MHz at 400 MHz Read iatency of 2 5 ciock cycies Two input ciocks K and K for precise DDR t
CY7C1166V18 CY7C1177V18 CY7C1168V18 CY7C1170V18 y CYPRESS PERFORM 18 Mbit DDR II SRAM 2 Word Burst Architecture 2 5 Cycle Read Latency Features 18 Mbit density 2M x 8 2M x 9 1M x 18 512K x 36 300 MHz to 400 MHz clock for high bandwidth 2 Word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 800 MHz at 400 MHz Read latency of 2 5 clock cycles Two input clocks K and K for precise DDR
CY7C1166V18 CY7C1177V18 CY7C1168V18 CY7C1170V18 y CYPRESS PERFORM 18 Mbit DDR II SRAM 2 Word Burst Architecture 2 5 Cycle Read Latency Features 18 Mbit density 2M x 8 2M x 9 1M x 18 512K x 36 300 MHz to 400 MHz clock for high bandwidth 2 Word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 800 MHz at 400 MHz Read latency of 2 5 clock cycles Two input clocks K and K for precise DDR
CY7C1161V18 CY7C1176V18 CY7C1163V18 CY7C1165V18 y CYPRESS PERFORM 18 Mbit QDR II SRAM 4 Word Burst Architecture 2 5 Cycle Read Latency Features Separate independent read and write data ports Supports concurrent transactions 300 MHz to 400 MHz clock for high bandwidth 4 word burst to reduce address bus frequency Double Data Rate DDR interfaces on both read and write ports data transferred at 800 MHz at 400 MHz Read latency of 2 5
CY7C1166V18 CY7C1177V18 CY7C1168V18 CY7C1170V18 y CYPRESS PERFORM 18 Mbit DDR II SRAM 2 Word Burst Architecture 2 5 Cycle Read Latency Features 18 Mbit density 2M x 8 2M x 9 1M x 18 512K x 36 300 MHz to 400 MHz clock for high bandwidth 2 Word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 800 MHz at 400 MHz Read latency of 2 5 clock cycles Two input clocks K and K for precise DDR
CY7C1241V18 CY7C1256V18 CY7C1243V18 CY7C1245V18 y CYPRESS PERFORM 36 Mbit QDR II SRAM 4 Word Burst Architecture 2 0 Cycle Read Latency Features Separate independent read and write data ports Supports concurrent transactions 300 MHz to 375 MHz clock for high bandwidth 4 Word Burst for reducing address bus frequency Double Data Rate DDR interfaces on both read and write ports data transferred at 750 MHz at 375 MHz Read latency of
CY7C1241V18 CY7C1256V18 CY7C1243V18 CY7C1245V18 y CYPRESS PERFORM 36 Mbit QDR II SRAM 4 Word Burst Architecture 2 0 Cycle Read Latency Features Separate independent read and write data ports Supports concurrent transactions 300 MHz to 375 MHz clock for high bandwidth 4 Word Burst for reducing address bus frequency Double Data Rate DDR interfaces on both read and write ports data transferred at 750 MHz at 375 MHz Read latency of
CY7C1241V18 CY7C1256V18 CY7C1243V18 CY7C1245V18 y CYPRESS PERFORM 36 Mbit QDR II SRAM 4 Word Burst Architecture 2 0 Cycle Read Latency Features Separate independent read and write data ports Supports concurrent transactions 300 MHz to 375 MHz clock for high bandwidth 4 Word Burst for reducing address bus frequency Double Data Rate DDR interfaces on both read and write ports data transferred at 750 MHz at 375 MHz Read latency of
CY7C1246V18 CY7C1257V18 CYPRESS _ CY7C1248V18 CY7C1250V18 36 Mbit DDR II SRAM 2 Word Burst Architecture 2 0 Cycle Read Latency Features 36 Mbit density 4M x 8 4M x 9 2M x 18 1M x 36 300 MHz to 375 MHz clock for high bandwidth 2 Word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 750 MHz at 375 MHz Read latency of 2 0 clock cycles Two input clocks K and K for precise DDR timing SRA
CY7C1246V18 CY7C1257V18 CYPRESS _ CY7C1248V18 CY7C1250V18 36 Mbit DDR II SRAM 2 Word Burst Architecture 2 0 Cycle Read Latency Features 36 Mbit density 4M x 8 4M x 9 2M x 18 1M x 36 300 MHz to 375 MHz clock for high bandwidth 2 Word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 750 MHz at 375 MHz Read latency of 2 0 clock cycles Two input clocks K and K for precise DDR timing SRA
CY7C1246V18 CY7C1257V18 CYPRESS _ CY7C1248V18 CY7C1250V18 36 Mbit DDR II h SRAM 2 Word Burst Architecture 2 0 Cycle Read Latency Features 36 Mbit density 4M x 8 4M x 9 2M x 18 1M x 36 300 MHz to 375 MHz clock for high bandwidth 2 Word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 750 MHz at 375 MHz Read latency of 2 0 clock cycles Two Input clocks K and K for precise DDR timing SR
CY7C1241V18 CY7C1256V18 CY7C1243V18 CY7C1245V18 CYPRESS PERFORM 36 Mbit QDR II SRAM 4 Word Burst Architecture 2 0 Cycle Read Latency Features Separate independent read and write data ports Supports concurrent transactions 300 MHz to 375 MHz ciock for high bandwidth 4 Word Burst for reducing address bus frequency Doubie Data Rate DDR interfaces on both read and write ports data transferred at 750 MHz at 375 MHz Read iatency of 2
CY7C1246V18 CY7C1257V18 CYPRESS _ CY7C1248V18 CY7C1250V18 36 Mbit DDR II SRAM 2 Word Burst Architecture 2 0 Cycle Read Latency Features 36 Mbit density 4M x 8 4M x 9 2M x 18 1M x 36 300 MHz to 375 MHz clock for high bandwidth 2 Word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 750 MHz at 375 MHz Read latency of 2 0 clock cycles Two input clocks K and K for precise DDR timing SRA
CY7C1266V18 CY7C1277V18 CYPRESS _ CY7C1268V18 CY7C1270V18 36 Mbit DDR II SRAM 2 Word Burst Architecture 2 5 Cycle Read Latency Features 36 Mbit density 4M x 8 4M x 9 2M x 18 1M x 36 300 MHz to 400 MHz clock for high bandwidth 2 Word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 800 MHz at 400 MHz Read latency of 2 5 clock cycles Two input clocks K and K for precise DDR timing SRA
CY7C1266V18 CY7C1277V18 CYPRESS _ CY7C1268V18 CY7C1270V18 36 Mbit DDR II SRAM 2 Word Burst Architecture 2 5 Cycle Read Latency Features 36 Mbit density 4M x 8 4M x 9 2M x 18 1M x 36 300 MHz to 400 MHz clock for high bandwidth 2 Word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 800 MHz at 400 MHz Read latency of 2 5 clock cycles Two input clocks K and K for precise DDR timing SRA
CY7C1266V18 CY7C1277V18 CYPRESS _ CY7C1268V18 CY7C1270V18 36 Mbit DDR II SRAM 2 Word Burst Architecture 2 5 Cycle Read Latency Features 36 Mbit density 4M x 8 4M x 9 2M x 18 1M x 36 300 MHz to 400 MHz clock for high bandwidth 2 Word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 800 MHz at 400 MHz Read latency of 2 5 clock cycles Two input clocks K and K for precise DDR timing SRA
CY7C1266V18 CY7C1277V18 CYPRESS _ CY7C1268V18 CY7C1270V18 36 Mbit DDR II SRAM 2 Word Burst Architecture 2 5 Cycle Read Latency Features 36 Mbit density 4M x 8 4M x 9 2M x 18 1M x 36 300 MHz to 400 MHz clock for high bandwidth 2 Word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 800 MHz at 400 MHz Read latency of 2 5 clock cycles Two input clocks K and K for precise DDR timing SRA
CY7C1292DV18 CY7C1294DV18 CYPRESS PERFORM Features Separate Independent Read and Write data ports Supports concurrent transactions 250 MHz clock for high bandwidth 2 Word Burst on all accesses Double Data Rate DDR interfaces on both Read and Write ports data transferred at 500 MHz 250 MHz Two input clocks K and K for precise DDR timing SRAM uses rising edges only Two input clocks for output data C and C to minimize cloc
CY7C1292DV18 CY7C1294DV18 CYPRESS PERFORM Features Separate Independent Read and Write data ports Supports concurrent transactions 250 MHz clock for high bandwidth 2 Word Burst on all accesses Double Data Rate DDR interfaces on both Read and Write ports data transferred at 500 MHz 250 MHz Two input clocks K and K for precise DDR timing SRAM uses rising edges only Two input clocks for output data C and C to minimize cloc
CYPRESS PRELIMINARY CY7C1310AV18 CY7C1312AV18 CY7C1314AV18 18 Mb QDR II SRAM 2 Word Burst Architecture Features Functional Description Separate independent Read and Write data ports Supports concurrent transactions 167 MHz clock for high bandwidth 2 Word Burst on all accesses Double Data Rate DDR interfaces on both Read and Write ports data transferred at 333 MHz 167MHz Two input clocks K and K for precise DDR timing
PERFORM CY7C1310BV18 CY7C1910BV18 CY7C1312BV18 CY7C1314BV18 18 Mbit QDR II SRAM 2 Word Burst Architecture Features Separate independent read and write data ports Supports concurrent transactions 250 MHz clock for high bandwidth 2 word burst on all accesses Double Data Rate DDR interfaces on both read and write ports data transferred at 500 MHz at 250 MHz Two input clocks K and K for precise DDR timing SRAM uses rising edges o
y CYPRESS PRELIMINARY CY7C1310AV18 CY7C1312AV18 CY7C1314AV18 18 Mb QDR II SRAM 2 Word Burst Architecture Features Separate independent Read and Write data ports Supports concurrent transactions 167 MHz clock for high bandwidth 2 Word Burst on all accesses Double Data Rate DDR interfaces on both Read and Write ports data transferred at 333 MHz 167MHz Two input clocks K and K for precise DDR timing SRAM uses rising edge onl
PERFORM CY7C1310BV18 CY7C1910BV18 CY7C1312BV18 CY7C1314BV18 18 Mbit QDR II SRAM 2 Word Burst Architecture Features Separate independent read and write data ports Supports concurrent transactions 250 MHz clock for high bandwidth 2 word burst on all accesses Double Data Rate DDR interfaces on both read and write ports data transferred at 500 MHz at 250 MHz Two input clocks K and K for precise DDR timing SRAM uses rising edges o
y CYPRESS PRELIMINARY CY7C1310AV18 CY7C1312AV18 CY7C1314AV18 18 Mb QDR II SRAM 2 Word Burst Architecture Features Separate independent Read and Write data ports Supports concurrent transactions 167 MHz clock for high bandwidth 2 Word Burst on all accesses Double Data Rate DDR interfaces on both Read and Write ports data transferred at 333 MHz 167MHz Two input clocks K and K for precise DDR timing SRAM uses rising edge onl
PERFORM CY7C1310BV18 CY7C1910BV18 CY7C1312BV18 CY7C1314BV18 18 Mbit QDR II SRAM 2 Word Burst Architecture Features Separate independent read and write data ports Supports concurrent transactions 250 MHz clock for high bandwidth 2 word burst on all accesses Double Data Rate DDR interfaces on both read and write ports data transferred at 500 MHz at 250 MHz Two input clocks K and K for precise DDR timing SRAM uses rising edges o
PERFORM CY7C1316BV18 CY7C1916BV18 CY7C1318BV18 CY7C1320BV18 18 Mbit DDR II SRAM 2 Word Burst Architecture Features 18 Mbit density 2M x 8 2M x 9 1M x 18 512K x 36 300 MHz clock for high bandwidth 2 word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 600 MHz at 300 MHz Two input clocks K and K for precise DDR timing SRAM uses rising edges only Two input clocks for output data C an
PERFORM CY7C1316CV18 CY7C1916CV18 CY7C1318CV18 CY7C1320CV18 18 Mbit DDR II SRAM 2 Word Burst Architecture Features 18 Mbit density 2M x 8 2M x 9 1M x 18 512K x 36 267 MHz clock for high bandwidth 2 word burst for reducing address bus frequency Double Data Rate DDR Interfaces data transferred at 534 MHz at 267 MHz Two Input clocks K and K for precise DDR timing o SRAM uses rising edges only Two Input clocks for output data C and
PERFORM CY7C1316JV18 CY7C1916JV18 CY7C1318JV18 CY7C1320JV18 18 Mbit DDR II SRAM 2 Word Burst Architecture Features 18 Mbit density 2M x 8 2M x 9 1M x 18 512K x 36 300 MHz clock for high bandwidth 2 word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 600 MHz at 300 MHz Two input clocks K and K for precise DDR timing SRAM uses rising edges only Two input clocks for output data C an
PERFORM CY7C1317CV18 CY7C1917CV18 CY7C1319CV18 CY7C1321CV18 18 Mbit DDR II SRAM 4 Word Burst Architecture Features 18 Mbit density 2M x 8 2M x 9 1M x 18 512K x 36 300 MHz clock for high bandwidth 4 word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 600 MHz at 300 MHz Two input clocks K and K for precise DDR timing SRAM uses rising edges only Two input clocks for output data C an
PERFORM CY7C1316BV18 CY7C1916BV18 CY7C1318BV18 CY7C1320BV18 18 Mbit DDR II SRAM 2 Word Burst Architecture Features 18 Mbit density 2M x 8 2M x 9 1M x 18 512K x 36 300 MHz clock for high bandwidth 2 word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 600 MHz at 300 MHz Two input clocks K and K for precise DDR timing SRAM uses rising edges only Two input clocks for output data C an
PERFORM CY7C1316CV18 CY7C1916CV18 CY7C1318CV18 CY7C1320CV18 18 Mbit DDR II SRAM 2 Word Burst Architecture Features 18 Mbit density 2M x 8 2M x 9 1M x 18 512K x 36 267 MHz clock for high bandwidth 2 word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 534 MHz at 267 MHz Two input clocks K and K for precise DDR timing SRAM uses rising edges only Two input clocks for output data C an
CY7C1318CV18 CY7C1320CV18 y CYPRESS PERFORM 18 Mbit DDR li SRAM 2 Word Burst Architecture Features 18 Mbit Density 1M x 18 512Kx 36 267 MHz Clock for high Bandwidth 2 word Burst for reducing Address Bus Frequency Double Data Rate DDR Interfaces data transferred at 534 MHz at 267 MHz Two Input Clocks K and K for precise DDR Timing SRAM uses rising edges only Two Input Clocks for Output Data C and C to minimize Clock Skew an
CY7C1318CV18 CY7C1320CV18 y CYPRESS PERFORM 18 Mbit DDR li SRAM 2 Word Burst Architecture Features 18 Mbit Density 1M x 18 512Kx 36 267 MHz Clock for high Bandwidth 2 word Burst for reducing Address Bus Frequency Double Data Rate DDR Interfaces data transferred at 534 MHz at 267 MHz Two Input Clocks K and K for precise DDR Timing SRAM uses rising edges only Two Input Clocks for Output Data C and C to minimize Clock Skew an
CY7C1318CV18 CY7C1320CV18 y CYPRESS PERFORM 18 Mbit DDR li SRAM 2 Word Burst Architecture Features 18 Mbit Density 1M x 18 512Kx 36 267 MHz Clock for high Bandwidth 2 word Burst for reducing Address Bus Frequency Double Data Rate DDR Interfaces data transferred at 534 MHz at 267 MHz Two Input Clocks K and K for precise DDR Timing SRAM uses rising edges only Two Input Clocks for Output Data C and C to minimize Clock Skew an
CY7C1318CV18 CY7C1320CV18 y CYPRESS PERFORM 18 Mbit DDR li SRAM 2 Word Burst Architecture Features 18 Mbit Density 1M x 18 512Kx 36 267 MHz Clock for high Bandwidth 2 word Burst for reducing Address Bus Frequency Double Data Rate DDR Interfaces data transferred at 534 MHz at 267 MHz Two Input Clocks K and K for precise DDR Timing SRAM uses rising edges only Two Input Clocks for Output Data C and C to minimize Clock Skew an
CY7C1318CV18 CY7C1320CV18 y CYPRESS PERFORM 18 Mbit DDR li SRAM 2 Word Burst Architecture Features 18 Mbit Density 1M x 18 512Kx 36 267 MHz Clock for high Bandwidth 2 word Burst for reducing Address Bus Frequency Double Data Rate DDR Interfaces data transferred at 534 MHz at 267 MHz Two Input Clocks K and K for precise DDR Timing SRAM uses rising edges only Two Input Clocks for Output Data C and C to minimize Clock Skew an
CY7C1318CV18 CY7C1320CV18 y CYPRESS PERFORM 18 Mbit DDR li SRAM 2 Word Burst Architecture Features 18 Mbit Density 1M x 18 512Kx 36 267 MHz Clock for high Bandwidth 2 word Burst for reducing Address Bus Frequency Double Data Rate DDR Interfaces data transferred at 534 MHz at 267 MHz Two Input Clocks K and K for precise DDR Timing SRAM uses rising edges only Two Input Clocks for Output Data C and C to minimize Clock Skew an
PERFORM CY7C1316JV18 CY7C1916JV18 CY7C1318JV18 CY7C1320JV18 18 Mbit DDR II SRAM 2 Word Burst Architecture Features 18 Mbit density 2M x 8 2M x 9 1M x 18 512K x 36 300 MHz clock for high bandwidth 2 word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 600 MHz at 300 MHz Two input clocks K and K for precise DDR timing SRAM uses rising edges only Two input clocks for output data C an
PERFORM CY7C1317CV18 CY7C1917CV18 CY7C1319CV18 CY7C1321CV18 18 Mbit DDR II SRAM 4 Word Burst Architecture Features 18 Mbit density 2M x 8 2M x 9 1M x 18 512K x 36 300 MHz clock for high bandwidth 4 word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 600 MHz at 300 MHz Two input clocks K and K for precise DDR timing SRAM uses rising edges only Two input clocks for output data C an
PERFORM CY7C1316BV18 CY7C1916BV18 CY7C1318BV18 CY7C1320BV18 18 Mbit DDR II SRAM 2 Word Burst Architecture Features 18 Mbit density 2M x 8 2M x 9 1M x 18 512K x 36 300 MHz clock for high bandwidth 2 word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 600 MHz at 300 MHz Two input clocks K and K for precise DDR timing SRAM uses rising edges only Two input clocks for output data C an
PERFORM CY7C1316CV18 CY7C1916CV18 CY7C1318CV18 CY7C1320CV18 18 Mbit DDR II SRAM 2 Word Burst Architecture Features 18 Mbit density 2M x 8 2M x 9 1M x 18 512K x 36 267 MHz clock for high bandwidth 2 word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 534 MHz at 267 MHz Two input clocks K and K for precise DDR timing SRAM uses rising edges only Two input clocks for output data C an
CY7C1318CV18 CY7C1320CV18 y CYPRESS PERFORM 18 Mbit DDR li SRAM 2 Word Burst Architecture Features 18 Mbit Density 1M x 18 512Kx 36 267 MHz Clock for high Bandwidth 2 word Burst for reducing Address Bus Frequency Double Data Rate DDR Interfaces data transferred at 534 MHz at 267 MHz Two Input Clocks K and K for precise DDR Timing SRAM uses rising edges only Two Input Clocks for Output Data C and C to minimize Clock Skew an
CY7C1318CV18 CY7C1320CV18 CYPRESS PERFORM 18 Mbit DDR II SRAM 2 Word Burst Architecture Features 18 Mbit Density 1M x 18 512Kx 36 267 MHz Clock for high Bandwidth 2 word Burst for reducing Address Bus Frequency Double Data Rate DDR Interfaces data transferred at 534 MHz at 267 MHz Two Input Clocks K and K for precise DDR Timing SRAM uses rising edges only Two Input Clocks for Output Data C and C to minimize Clock Skew an
CY7C1318CV18 CY7C1320CV18 y CYPRESS PERFORM 18 Mbit DDR li SRAM 2 Word Burst Architecture Features 18 Mbit Density 1M x 18 512Kx 36 267 MHz Clock for high Bandwidth 2 word Burst for reducing Address Bus Frequency Double Data Rate DDR Interfaces data transferred at 534 MHz at 267 MHz Two Input Clocks K and K for precise DDR Timing SRAM uses rising edges only Two Input Clocks for Output Data C and C to minimize Clock Skew an
CY7C1318CV18 CY7C1320CV18 y CYPRESS PERFORM 18 Mbit DDR li SRAM 2 Word Burst Architecture Features 18 Mbit Density 1M x 18 512Kx 36 267 MHz Clock for high Bandwidth 2 word Burst for reducing Address Bus Frequency Double Data Rate DDR Interfaces data transferred at 534 MHz at 267 MHz Two Input Clocks K and K for precise DDR Timing SRAM uses rising edges only Two Input Clocks for Output Data C and C to minimize Clock Skew an
CY7C1318CV18 CY7C1320CV18 CYPRESS PERFORM 18 Mbit DDR II SRAM 2 Word Burst Architecture Features 18 Mbit Density 1M x 18 512Kx 36 267 MHz Clock for high Bandwidth 2 word Burst for reducing Address Bus Frequency Double Data Rate DDR Interfaces data transferred at 534 MHz at 267 MHz Two Input Clocks K and K for precise DDR Timing o SRAM uses rising edges only Two Input Clocks for Output Data C and C to minimize Clock Skew and Fl
PERFORM CY7C1316JV18 CY7C1916JV18 CY7C1318JV18 CY7C1320JV18 18 Mbit DDR II SRAM 2 Word Burst Architecture Features 18 Mbit density 2M x 8 2M x 9 1M x 18 512K x 36 300 MHz clock for high bandwidth 2 word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 600 MHz at 300 MHz Two input clocks K and K for precise DDR timing SRAM uses rising edges only Two input clocks for output data C an
PERFORM CY7C1317CV18 CY7C1917CV18 CY7C1319CV18 CY7C1321CV18 18 Mbit DDR II SRAM 4 Word Burst Architecture Features 18 Mbit density 2M x 8 2M x 9 1M x 18 512K x 36 300 MHz clock for high bandwidth 4 word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 600 MHz at 300 MHz Two input clocks K and K for precise DDR timing SRAM uses rising edges only Two input clocks for output data C an
PERFORM CY7C1392BV18 CY7C1992BV18 CY7C1393BV18 CY7C1394BV18 18 Mbit DDR II SIO SRAM 2 Word Burst Architecture Features 18 Mbit density 2M x 8 2M x 9 1M x 18 512K x 36 300 MHz clock for high bandwidth 2 word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 600 MHz at 300 MHz Two input clocks K and K for precise DDR timing SRAM uses rising edges only Two input clocks for output data
PERFORM CY7C1392BV18 CY7C1992BV18 CY7C1393BV18 CY7C1394BV18 18 Mbit DDR II SIO SRAM 2 Word Burst Architecture Features 18 Mbit density 2M x 8 2M x 9 1M x 18 512K x 36 300 MHz clock for high bandwidth 2 word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 600 MHz at 300 MHz Two input clocks K and K for precise DDR timing SRAM uses rising edges only Two input clocks for output data
PERFORM CY7C1392BV18 CY7C1992BV18 CY7C1393BV18 CY7C1394BV18 18 Mbit DDR II SIO SRAM 2 Word Burst Architecture Features 18 Mbit density 2M x 8 2M x 9 1M x 18 512K x 36 300 MHz clock for high bandwidth 2 word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 600 MHz at 300 MHz Two input clocks K and K for precise DDR timing SRAM uses rising edges only Two input clocks for output data
PERFORM CY7C1410AV18 CY7C1425AV18 CY7C1412AV18 CY7C1414AV18 36 Mbit QDR II SRAM 2 Word Burst Architecture Features Separate independent read and write data ports Supports concurrent transactions 250 MHz clock for high bandwidth 2 word burst on all accesses Double Data Rate DDR interfaces on both read and write ports data transferred at 500 MHz at 250 MHz Two input clocks K and K for precise DDR timing SRAM uses rising edges o
PERFORM CY7C1410JV18 CY7C1425JV18 CY7C1412JV18 CY7C1414JV18 36 Mbit QDR II SRAM 2 Word Burst Architecture Features Separate independent read and write data ports Supports concurrent transactions 267 MHz clock for high bandwidth 2 word burst on all accesses Double Data Rate DDR interfaces on both read and write ports data transferred at 534 MHz at 267 MHz Two input clocks K and K for precise DDR timing SRAM uses rising edges
y CYPRESS PERFORM CY7C1411JV18 CY7C1426JV18 CY7C1413JV18 CY7C1415JV18 36 Mbit QDR II SRAM 4 Word Burst Architecture Features Separate independent read and write data ports Supports concurrent transactions 300 MHz clock for high bandwidth 4 word burst for reducing address bus frequency Double Data Rate DDR interfaces on both read and write ports data transferred at 600 MHz at 300 MHz Two input clocks K and K for precise DDR timin
PERFORM CY7C1410AV18 CY7C1425AV18 CY7C1412AV18 CY7C1414AV18 36 Mbit QDR II SRAM 2 Word Burst Architecture Features Separate independent read and write data ports Supports concurrent transactions 250 MHz clock for high bandwidth 2 word burst on all accesses Double Data Rate DDR interfaces on both read and write ports data transferred at 500 MHz at 250 MHz Two input clocks K and K for precise DDR timing SRAM uses rising edges o
PERFORM CY7C1410JV18 CY7C1425JV18 CY7C1412JV18 CY7C1414JV18 36 Mbit QDR II SRAM 2 Word Burst Architecture Features Separate independent read and write data ports Supports concurrent transactions 267 MHz clock for high bandwidth 2 word burst on all accesses Double Data Rate DDR interfaces on both read and write ports data transferred at 534 MHz at 267 MHz Two input clocks K and K for precise DDR timing SRAM uses rising edges
CYPRESS PERFORM CY7C1411JV18 CY7C1426JV18 CY7C1413JV18 CY7C1415JV18 36 Mbit QDR SRAM 4 Word Burst Architecture Features Separate independent read and write data ports o Supports concurrent transactions 300 MHz ciock for high bandwidth 4 word burst for reducing address bus frequency Doubie Data Rate DDR interfaces on both read and write ports data transferred at 600 MHz at 300 MHz Two input ciocks K and K for precise DDR timing o
PERFORM CY7C1410AV18 CY7C1425AV18 CY7C1412AV18 CY7C1414AV18 36 Mbit QDR II SRAM 2 Word Burst Architecture Features Separate independent read and write data ports Supports concurrent transactions 250 MHz clock for high bandwidth 2 word burst on all accesses Double Data Rate DDR interfaces on both read and write ports data transferred at 500 MHz at 250 MHz Two input clocks K and K for precise DDR timing SRAM uses rising edges o
PERFORM CY7C1410JV18 CY7C1425JV18 CY7C1412JV18 CY7C1414JV18 36 Mbit QDR SRAM 2 Word Burst Architecture Features Separate independent read and write data ports o Supports concurrent transactions 267 MHz ciock for high bandwidth 2 word burst on aii accesses Doubie Data Rate DDR interfaces on both read and write ports data transferred at 534 MHz at 267 MHz Two input ciocks K and K for precise DDR timing o SRAM uses rising edges oniy
y CYPRESS PERFORM CY7C1411JV18 CY7C1426JV18 CY7C1413JV18 CY7C1415JV18 36 Mbit QDR II SRAM 4 Word Burst Architecture Features Separate independent read and write data ports Supports concurrent transactions 300 MHz clock for high bandwidth 4 word burst for reducing address bus frequency Double Data Rate DDR interfaces on both read and write ports data transferred at 600 MHz at 300 MHz Two input clocks K and K for precise DDR timin
PERFORM CY7C1416AV18 CY7C1427AV18 CY7C1418AV18 CY7C1420AV18 36 Mbit DDR II SRAM 2 Word Burst Architecture Features 36 Mbit density 4M x 8 4M x 9 2M x 18 1M x 36 300 MHz clock for high bandwidth 2 word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 600MHz at 300 MHz for DDR II Two input clocks K and K for precise DDR timing SRAM uses rising edges only Two input clocks for output d
PERFORM CY7C1416AV18 CY7C1427AV18 CY7C1418AV18 CY7C1420AV18 36 Mbit DDR II SRAM 2 Word Burst Architecture Features 36 Mbit density 4M x 8 4M x 9 2M x 18 1M x 36 300 MHz clock for high bandwidth 2 word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 600MHz at 300 MHz for DDR II Two input clocks K and K for precise DDR timing SRAM uses rising edges only Two input clocks for output d
PERFORM CY7C1416AV18 CY7C1427AV18 CY7C1418AV18 CY7C1420AV18 36 Mbit DDR II SRAM 2 Word Burst Architecture Features 36 Mbit density 4M x 8 4M x 9 2M x 18 1M x 36 300 MHz clock for high bandwidth 2 word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 600MHz at 300 MHz for DDR II Two input clocks K and K for precise DDR timing SRAM uses rising edges only Two input clocks for output d
PERFORM CY7C1422BV18 CY7C1429BV18 CY7C1423BV18 CY7C1424BV18 36 Mbit DDR II SIO SRAM 2 Word Burst Architecture Features 36 Mbit density 4M x 8 4M x 9 2M x 18 1M x 36 300 MHz clock for high bandwidth 2 word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 600 MHz at 300 MHz Two input clocks K and K for precise DDR timing SRAM uses rising edges only Two input clocks for output data C
PERFORM CY7C1422BV18 CY7C1429BV18 CY7C1423BV18 CY7C1424BV18 36 Mbit DDR II SIO SRAM 2 Word Burst Architecture Features 36 Mbit density 4M x 8 4M x 9 2M x 18 1M x 36 300 MHz clock for high bandwidth 2 word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 600 MHz at 300 MHz Two input clocks K and K for precise DDR timing SRAM uses rising edges only Two input clocks for output data C
PERFORM CY7C1422BV18 CY7C1429BV18 CY7C1423BV18 CY7C1424BV18 36 Mbit DDR II SIO SRAM 2 Word Burst Architecture Features 36 Mbit density 4M x 8 4M x 9 2M x 18 1M x 36 300 MHz clock for high bandwidth 2 word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 600 MHz at 300 MHz Two input clocks K and K for precise DDR timing SRAM uses rising edges only Two input clocks for output data C
PERFORM CY7C1410AV18 CY7C1425AV18 CY7C1412AV18 CY7C1414AV18 36 Mbit QDR II SRAM 2 Word Burst Architecture Features Separate independent read and write data ports Supports concurrent transactions 250 MHz clock for high bandwidth 2 word burst on all accesses Double Data Rate DDR interfaces on both read and write ports data transferred at 500 MHz at 250 MHz Two input clocks K and K for precise DDR timing SRAM uses rising edges o
PERFORM CY7C1410JV18 CY7C1425JV18 CY7C1412JV18 CY7C1414JV18 36 Mbit QDR II SRAM 2 Word Burst Architecture Features Separate independent read and write data ports Supports concurrent transactions 267 MHz clock for high bandwidth 2 word burst on all accesses Double Data Rate DDR interfaces on both read and write ports data transferred at 534 MHz at 267 MHz Two input clocks K and K for precise DDR timing SRAM uses rising edges
y CYPRESS PERFORM CY7C1411JV18 CY7C1426JV18 CY7C1413JV18 CY7C1415JV18 36 Mbit QDR II SRAM 4 Word Burst Architecture Features Separate independent read and write data ports Supports concurrent transactions 300 MHz clock for high bandwidth 4 word burst for reducing address bus frequency Double Data Rate DDR interfaces on both read and write ports data transferred at 600 MHz at 300 MHz Two input clocks K and K for precise DDR timin
PERFORM CY7C1416AV18 CY7C1427AV18 CY7C1418AV18 CY7C1420AV18 36 Mbit DDR II SRAM 2 Word Burst Architecture Features 36 Mbit density 4M x 8 4M x 9 2M x 18 1M x 36 300 MHz clock for high bandwidth 2 word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 600MHz at 300 MHz for DDR II Two input clocks K and K for precise DDR timing SRAM uses rising edges only Two input clocks for output d
PERFORM CY7C1422BV18 CY7C1429BV18 CY7C1423BV18 CY7C1424BV18 36 Mbit DDR II SIO SRAM 2 Word Burst Architecture Features 36 Mbit density 4M x 8 4M x 9 2M x 18 1M x 36 300 MHz clock for high bandwidth 2 word burst for reducing address bus frequency Double Data Rate DDR interfaces data transferred at 600 MHz at 300 MHz Two input clocks K and K for precise DDR timing SRAM uses rising edges only Two input clocks for output data C
PERFORM CY7C1510JV18 CY7C1525JV18 CY7C1512JV18 CY7C1514JV18 72 Mbit QDR II SRAM 2 Word Burst Architecture Features Separate independent read and write data ports Supports concurrent transactions 267 MHz clock for high bandwidth 2 word burst on all accesses Double Data Rate DDR interfaces on both read and write ports data transferred at 534 MHz at 267 MHz Two input clocks K and K for precise DDR timing SRAM uses rising edges o
7 CY7C1510KV18 CY7C1525KV18 t CYPRESS CY7C1512KV18 CY7C1514KV18 72 Mbit QDR II SRAM 2 Word Burst Architecture Features Separate Independent Read and Write Data Ports Supports concurrent transactions 333 MHz Clock for High Bandwidth 2 word Burst on all Accesses Double Data Rate DDR Interfaces on both Read and Write Ports data transferred at 666 MHz at 333 MHz Two Input Clocks K and K for precise DDR timing SRAM uses risi
PERFORM CY7C1511JV18 CY7C1526JV18 CY7C1513JV18 CY7C1515JV18 72 Mbit QDR II SRAM 4 Word Burst Architecture Features Separate independent read and write data ports Supports concurrent transactions 300 MHz clock for high bandwidth 4 word burst for reducing address bus frequency Double Data Rate DDR interfaces on both read and write ports data transferred at 600 MHz at 300 MHz Two input clocks K and K for precise DDR timing SRAM
y CYPRESS PERFORM CY7C1511V18 CY7C1526V18 CY7C1513V18 CY7C1515V18 72 Mbit QDR II SRAM 4 Word Burst Architecture Features Separate independent read and write data ports Supports concurrent transactions 300 MHz clock for high bandwidth 4 word burst for reducing address bus frequency Double Data Rate DDR interfaces on both read and write ports data transferred at 600 MHz at 300 MHz Two input clocks K and K for precise DDR timing
PERFORM CY7C1510JV18 CY7C1525JV18 CY7C1512JV18 CY7C1514JV18 72 Mbit QDR II SRAM 2 Word Burst Architecture Features Separate independent read and write data ports Supports concurrent transactions 267 MHz clock for high bandwidth 2 word burst on all accesses Double Data Rate DDR interfaces on both read and write ports data transferred at 534 MHz at 267 MHz Two input clocks K and K for precise DDR timing SRAM uses rising edges o
7 CY7C1510KV18 CY7C1525KV18 t CYPRESS CY7C1512KV18 CY7C1514KV18 72 Mbit QDR II SRAM 2 Word Burst Architecture Features Separate Independent Read and Write Data Ports Supports concurrent transactions 333 MHz Clock for High Bandwidth 2 word Burst on all Accesses Double Data Rate DDR Interfaces on both Read and Write Ports data transferred at 666 MHz at 333 MHz Two Input Clocks K and K for precise DDR timing SRAM uses risi