This product complies with the RoHS Directive EU 2002 95 EC Band Switching Diodes Panasonic MA27077G Silicon epitaxial planar type For band switching Features Low forward dynamic resistance r f Less voltage dependence of diode capacitance C D SSS Mini type package allowing downsizing of equipment and automatic insertion through the taping package Package Code SSSMini2 F3 Pin Name 1 Anode 2 Cathode Absolute Maximum Rating
ESD Diodes This product complies with the RoHS Directive EU 2002 95 EC Panasonic MAZE062D Silicon planar type For surge absorption circuit Features Low joint capacity zener diode Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Repetitive peak forward current Ifrm 200 mA Power dissipation Pd 150 mW Junction temperature T i 150 C Storage temperature Tstg 55 to 150 C Note P D 200 mW
Fast Recovery Diodes FRD This product complies with RoHS Directive EU 2002 95 EC Panasonic MA2DF60 Silicon Mesa type For high frequency rectification Features High switching speed Soft recovery Absolute Maximum Ratings 25 C Parameter Symbol Rating Unit Repetitive peak reverse voltage Vrrm 600 V Non repetitive peak reverse surge voltage Vrsm 600 V Forward eurrent Tc 25 C Ip 5 A Non repetitive peak forward su
Fast Recovery Diodes FRD This product complies with RoHS Directive EU 2002 95 EC Panasonic MA3DF40 Silicon Mesa type For high frequency rectification For plasma display panel drive Features High switching speed Soft recovery Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Repetitive peak reverse voltage Vrrm 370 V Non repetitive peak reverse surge voltage Vrsm 430 V Forward current T c 25 C If 2
This product complies with the RoHS Directive EU 2002 95 EC Infrared Light Emitting Diodes Panasonic LN77L GaAIAs Infrared Light Emitting Diode For optical control systems Features High power output high efficiency P 0 18 mW typ Fast response and high speed modulation capability fc 20 MHz typ Wide directivity 0 20 typ Transparent epoxy resin package I Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Un
This product complies with the RoHS Directive EU 2002 95 EC Infrared Light Emitting Diodes Panasonic LN77L GaAIAs Infrared Light Emitting Diode For optical control systems Features High power output high efficiency P 0 18 mW typ Fast response and high speed modulation capability fc 20 MHz typ Wide directivity 0 20 typ Transparent epoxy resin package I Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Un
Light Emitting Diodes This product complies with the RoHS Directive EU 2002 95 EC Panasonic LN217RPH Square Type 5 3 mm x 1 8 mm Absolute Maximum Ratings Ta 25 C Lighting Color Parameter Symbol Rating Unit Power dissipation Pd 70 mW Forward current h 25 mA Pulse forward current Ipp 150 mA Reverse voltage Vr 4 V Operating ambient temperature Topr 25 to 85 c Storage temperature Tstg 30 to 100 c
Light Emitting Diodes This product complies with the RoHS Directive EU 2002 95 EC Panasonic LN222RPX Round Type 2 0 mm Absolute Maximum Ratings Ta 25 C Lighting Color Parameter Symbol Rating Unit Power dissipation Pd 70 mW Forward current h 25 mA Pulse forward current Ipp 150 mA Reverse voltage Vr 4 V Operating ambient temperature Topr 25 to 85 c Storage temperature Tstg 30 to 100 c Note
Light Emitting Diodes This product complies with the RoHS Directive EU 2002 95 EC Panasonic LN29RPX Round Type 4 4 0 mm Absolute Maximum Ratings T a 25 C Lighting Color Parameter Symbol Rating Unit Power dissipation Pd 70 mW Forward current h 25 mA Pulse forward current i FP 150 mA Reverse voltage V R 4 V Operating ambient temperature T opr 25 to 85 c Storage temperature Tstg 30 to 100 c Note
Light Emitting Diodes This product complies with the RoHS Directive EU 2002 95 EC Panasonic LN360GPX Square Type 3 0 mm x 2 0 mm Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Power dissipation Pd 90 mW Forward current h 30 mA Pulse forward current i FP 150 mA Reverse voltage V R 4 V Operating ambient temperature T opr 25 to 85 c Storage temperature Tstg 30 to 100 c Note The
Light Emitting Diodes This product complies with the RoHS Directive EU 2002 95 EC Panasonic LN49YPX Round Type 4 0 mm Absolute Maximum Ratings Ta 25 C Parameter Symbol Rating Unit Power dissipation Pd 90 mW Forward current h 30 mA Pulse forward current Ipp 150 mA Reverse voltage Vr 4 V Operating ambient temperature Topr 25 to 85 c Storage temperature Tstg 30 to 100 c Note The condition of I
Light Emitting Diodes This product complies with the RoHS Directive EU 2002 95 EC Panasonic LN840RPX Round Type 4 gt 4 4 mm Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Power dissipation Pd 90 mW Forward current h 30 mA Pulse forward current i FP 150 mA Reverse voltage V R 3 V Operating ambient temperature T opr 25 to 85 c Storage temperature Tstg 30 to 100 c Note The conditio
Light Emitting Diodes This product complies with the RoHS Directive EU 2002 95 EC Panasonic LNG0A8CYBZ Oval Type 4 0 mm Absolute Maximum Ratings 25 C Parameter Symbol Rating Unit Power dissipation Pd 120 mW Forward current Ip 30 mA Pulse forward current Ipp 100 mA Reverse direct current Irdc 100 mA Operating ambient temperature T pr 25 to 80 C Storage temperature Tstg 30 to 100 C Note The
This product complies with the RoHS Directive EU 2002 95 EC Light Emitting Diodes Panasonic LNG692CF6 Round Type 4 gt 5 0 mm Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Power dissipation Pd 120 mW Forward current If 30 mA Pulse forward current i FP 100 mA Reverse voltage V R 5 V Operating ambient temperature T opr 25 to 80 c Storage temperature Tstg 30 to 100 c Lighting Color
Light Emitting Diodes This product complies with the RoHS Directive EU 2002 95 EC Panasonic LNG992CFB Round Type 4 gt 5 0 mm Absolute Maximum Ratings T a 25 C Lighting Color Parameter Symbol Rating Unit Power dissipation Pd 120 mW Forward current If 30 mA Pulse forward current i FP 100 mA Reverse voltage V R 5 V Operating ambient temperature T opr 25 to 80 c Storage temperature Tstg 30 to 100 c
Light Emitting Diodes This product complies with the RoHS Directive EU 2002 95 EC Panasonic LNJ024X4ARA1 Might Bright Surface Mounting Chip LED 3528 Type Absolute Maximum Ratings Ta 25 C Parameter Symbol Rating Unit Power dissipation Pd 120 mW Forward current h 30 mA Pulse forward current ipp 70 mA Reverse voltage Vr 5 V Operating ambient temperature Topr 0 to 100 c Storage temperature Tstg 0 to 100
This product complies with the RoHS Directive EU 2002 95 EC Light Emitting Diodes Panasonic LNJ0F1C5FRA1 Hight Bright Surface Mounting Chip LED Strobe Type I Absolute Maximum Ratings T a 25 3 C Lighting Color Parameter Symbol Rating Unit White Power dissipation Pd 103 mW Forward current h 25 mA Pulse forward current i FP 60 mA Reverse direct current Irdc 100 mA Operating ambient temperature T opr 30 to 85 C St
Light Emitting Diodes This product complies with the RoHS Directive EU 2002 95 EC Panasonic LNJ214R8ARA Surface Mounting Chip LED USS Type Absolute Maximum Ratings Ta 25 C Lighting Color Parameter Symbol Rating Unit Power dissipation Pd 40 mW Forward current If 15 mA Pulse forward current Ipp 50 mA Reverse voltage Vr 3 V Operating ambient temperature Topr 30 to 85 C Storage temperature Tstg 0 to 100
Light Emitting Diodes This product complies with the RoHS Directive EU 2002 95 EC Panasonic LNJ253W82RA Hight Bright Surface Mounting Chip LED SV Side View 0 5 Type Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Power dissipation Pd 55 mW Forward current h 20 mA Pulse forward current i FP 60 mA Reverse voltage V R 4 V Operating ambient temperature T opr 30 to 85 c Storage temperature Tstg
Light Emitting Diodes This product complies with the RoHS Directive EU 2002 95 EC Panasonic LNJ414K8YRA Surface Mounting Chip LED USS Type Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Power dissipation Pd 40 mW Forward current If 15 mA Pulse forward current i FP 50 mA Reverse voltage V R 3 V Operating ambient temperature Topr 30 to 85 c Storage temperature Tstg 40 to 100 c Note
Light Emitting Diodes This product complies with the RoHS Directive EU 2002 95 EC Panasonic LNG992CFB Round Type 4 gt 5 0 mm Absolute Maximum Ratings T a 25 C Lighting Color Parameter Symbol Rating Unit Power dissipation Pd 120 mW Forward current If 30 mA Pulse forward current i FP 100 mA Reverse voltage V R 5 V Operating ambient temperature T opr 25 to 80 c Storage temperature Tstg 30 to 100 c
Light Emitting Diodes This product complies with the RoHS Directive EU 2002 95 EC Panasonic LN29RPX Round Type 4 0 mm Absolute Maximum Ratings Ta 25 C Lighting Color Parameter Symbol Rating Unit Power dissipation Pd 70 mW Forward current h 25 mA Pulse forward current Ipp 150 mA Reverse voltage Vr 4 V Operating ambient temperature Topr 25 to 85 c Storage temperature Tstg 30 to 100 c Note
Light Emitting Diodes This product complies with the RoHS Directive EU 2002 95 EC Panasonic LN49YPX Round Type 4 0 mm Absolute Maximum Ratings Ta 25 C Parameter Symbol Rating Unit Power dissipation Pd 90 mW Forward current h 30 mA Pulse forward current Ipp 150 mA Reverse voltage Vr 4 V Operating ambient temperature Topr 25 to 85 c Storage temperature Tstg 30 to 100 c Note The condition of I
This product complies with the RoHS Directive EU 2002 95 EC Light Emitting Diodes PandSOIliC LNJ0F1C5FRA1 Might Bright Surface Mounting Chip LED strobe Type I Absolute Maximum Ratings Ta 25 3 C Lighting Color Parameter Symbol Rating Unit White Power dissipation Pd 103 mW Forward current h 25 mA Pulse forward current ipp 60 mA Reverse direct current Irdc 100 mA Operating ambient temperature Topr 30 to 85 C Stor
Light Emitting Diodes This product complies with the RoHS Directive EU 2002 95 EC Panasonic LN217RPH Square Type 5 3 mm x 1 8 mm Absolute Maximum Ratings T a 25 C Lighting Color Parameter Symbol Rating Unit Power dissipation Pd 70 mW Forward current h 25 mA Pulse forward current i FP 150 mA Reverse voltage V R 4 V Operating ambient temperature T opr 25 to 85 c Storage temperature Tstg 30 to 100
This product complies with the RoHS Directive EU 2002 95 EC Light Emitting Diodes Panasonic LNG692CF6 Round Type 5 0 mm Absolute Maximum Ratings Ta 25 C Parameter Symbol Rating Unit Power dissipation Pd 120 mW Forward current h 30 mA Pulse forward current Ipp 100 mA Reverse voltage Vr 5 V Operating ambient temperature Topr 25 to 80 c Storage temperature Tstg 30 to 100 c Lighting Color
Light Emitting Diodes This product complies with the RoHS Directive EU 2002 95 EC Panasonic LNJ414K8YRA Surface Mounting Chip LED USS Type Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Power dissipation Pd 40 mW Forward current If 15 mA Pulse forward current i FP 50 mA Reverse voltage V R 3 V Operating ambient temperature Topr 30 to 85 c Storage temperature Tstg 40 to 100 c Note
Light Emitting Diodes This product complies with the RoHS Directive EU 2002 95 EC Panasonic LNJ253W82RA Hight Bright Surface Mounting Chip LED SV Side View 0 5 Type Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Power dissipation Pd 55 mW Forward current h 20 mA Pulse forward current i FP 60 mA Reverse voltage V R 4 V Operating ambient temperature T opr 30 to 85 c Storage temperature Tstg
Light Emitting Diodes This product complies with the RoHS Directive EU 2002 95 EC Panasonic LNJ214R8ARA Surface Mounting Chip LED USS Type Absolute Maximum Ratings Ta 25 C Lighting Color Parameter Symbol Rating Unit Power dissipation Pd 40 mW Forward current If 15 mA Pulse forward current Ipp 50 mA Reverse voltage Vr 3 V Operating ambient temperature Topr 30 to 85 C Storage temperature Tstg 0 to 100
Light Emitting Diodes This product complies with the RoHS Directive EU 2002 95 EC Panasonic LN840RPX Round Type 4 4 mm Absolute Maximum Ratings Ta 25 C Parameter Symbol Rating Unit Power dissipation Pd 90 mW Forward current h 30 mA Pulse forward current Ipp 150 mA Reverse voltage Vr 3 V Operating ambient temperature Topr 25 to 85 c Storage temperature Tstg 30 to 100 c Note The condition of
PIN diodes This product complies with the RoHS Directive EU 2002 95 EC Panasonic MA27P02 Silicon epitaxial planar type For high frequency switch Features Small terminal capacitance Small forward dynamic resistance rf Ultraminiature package and surface mounting type 1 0 mm X 0 6 mm height 0 52 mm Absolute Maximum Ratings Ta 25 C Parameter Symbol Rating Unit Reverse voltage Vr 60 V Forward current Ip 100 mA Power
PIN Diodes This product complies with the RoHS Directive EU 2002 95 EC Panasonic MA27P07 Silicon planar type For high frequency switch Features Low terminal capacitance C t lt 0 35 pF Low forward dynamic resistance r f lt 1 5 0 Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Reverse voltage v R 60 V Forward current If 100 mA Power dissipation Pd 150 mW Junction temperature Tj 150 C
This product complies with the RoHS Directive EU 2002 95 EC pin diodes _ Panasonic MA27P110G Silicon epitaxial planar type For high frequency switch Features Low terminal capacitance Low forward dynamic resistance SSS Mini type 2 pin package Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Reverse voltage v R 60 V Forward current If 50 mA Power dissipation Pd 150 mW Junction temperature T i
This product complies with the RoHS Directive EU 2002 95 EC pin Diodes _ Panasonic MA2SP060G Silicon planar type For high frequency switch Features Low terminal capacitance C t lt 0 6 pF Low forward dynamic resistance r f lt 1 2 Q Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Reverse voltage v R 60 V Forward current If 100 mA Junction temperature T j 150 C Storage temperature Tstg 55 to
This product complies with the RoHS Directive EU 2002 95 EC pin diodes _ Panasonic MA27P110G Silicon epitaxial planar type For high frequency switch Features Low terminal capacitance Low forward dynamic resistance SSS Mini type 2 pin package Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Reverse voltage v R 60 V Forward current If 50 mA Power dissipation Pd 150 mW Junction temperature T i
PIN Photodiodes This product complies with the RoHS Directive EU 2002 95 EC Panasonic PNZ334 PN334 Silicon planar type For optical control systems Features Plastic type package 4 gt 5 High coupling capability suitable for plastic fiber High quantum efficiency High speed response Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Reverse voltage v R 30 V Power dissipation P D 100 mW Operating
Rectifier Diodes This product complies with the RoHS Directive EU 2002 95 EC Panasonic MA2J115 MA115 Silicon epitaxial planar type For small power current rectification Features S mini type package allowing high density mounting High reverse voltage V R Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Reverse voltage v R 200 V Maximum peak reverse voltage Vrm 200 V Output current I 0 200 mA Repeti
Rectifier Diodes This product complies with the RoHS Directive EU 2002 95 EC Panasonic MA6X129 MA 129 Silicon epitaxial planar type For small power current rectification Features Three isolated elements are contained in one package allowing high density mounting Allowing high voltage rectification Absolute Maximum Ratings Ta 25 C Parameter Symbol Rating Unit Reverse voltage Vr 200 V Maximum peak reverse voltage Vrm 200
This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD Panasonic MA24D60 Silicon epitaxial planar type For rectification Features Forward current Average If av 2 0 A rectification is possible Low forward voltage V F Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Reverse voltage V R 40 V Maximum peak reverse voltage Vrm 40 V Forward current Average If av 2
This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD Panasonic MA24D70 Silicon epitaxial planar type For rectification Overview Package MA24D70 is optimal for general circuit supplies Code TMinP2 F1 Features Pin Name Forward current Average If av 5 0 A rectification is possible Anode Low forward voltage V F and good rectification efhciency 2 Cathode Absolute Maximum Ratings T a
This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD Panasonic MA27D270G Silicon epitaxial planar type For super high speed switching Features Small reverse current I R Optimum for high frequency rectification because of its short reverse recovery time t rr SSS Mini type 2 pin package Package Code SSSMini2 F3 Pin Name 1 Anode 2 Cathode Absolute Maximum Ratings T a 25 C Param
This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD Panasonic MA27E02 Silicon epitaxial planar type For cellular phone Features High frequency wave detection is possible Low forward voltage V F Small terminal capacitance C t Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Reverse voltage v R 20 V Maximum peak reverse voltage Vrm 20 V Forward current If 35 mA
This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD Panasonic MA2SD250G Silicon epitaxial planar type For super high speed switching Features Forward current Average If av 200 mA rectification is possible Absolute Maximum Ratings Ta 25 C Parameter Symbol Rating Unit Reverse voltage Vr 15 V Repetitive peak reverse voltage RRM 15 V Forward current Average If AV 200 mA Peak
This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD PdndSOIliC MA2SD30 Silicon epitaxial planar type For super high speed switching Features Small reverse current Ir lt 2 pA at Vr 30 V Optimum for high frequency rectification because of its short reverse recovery time t Absolute Maximum Ratings Ta 25 C Pararueter Symbol Rating Unit Reverse voltage Vr 30 V Repetitive peak reverse volta
This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD Panasonic MA2SD31 Silicon epitaxial planar type For super high speed switching Features Ip AV 200 mA rectification is possible Low forward voltage V F lt 0 47 V at I F 200 mA Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Reverse voltage v R 30 V Repetitive peak reverse voltage Vrrm 30 V Forward current Avera
This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD Panasonic MA2SD32 Silicon epitaxial planar type For super high speed switching Features Ip AV 200 mA rectification is possible Small reverse current I R lt 5 pA at V R 30 V Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Reverse voltage v R 30 V Repetitive peak reverse voltage Vrrm 30 V Forward current Average
This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD PdndSOIliC MA2SE01 Silicon epitaxial planar type For mixer Features High frequency wave detection is possible Low forward voltage Vp Small terminal capacitance SS Mini type 2 pin package Absolute Maximum Ratings Ta 25 C Parameter Symbol Rating Unit Reverse voltage Vr 20 V Maximum peak reverse voltage RM 20 V Forward curren
This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD Panasonic MA2Z720 Silicon epitaxial planar type For high frequency rectification Features Forward current Average If av 500 mA rectification is possible High density mounting is possible Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Reverse voltage v R 40 V Maximum peak reverse voltage Vrm 40 V Forward current Av
This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD Panasonic MA2Z7840G Silicon epitaxial planar type For super high speed switching For small current rectification Features Package High density mounting is possible Code Forward current Average If av 1 0 mA rectification is possible SMini2 F3 Optimum for high frequency rectification because of its short Pin Name reverse recovery time Tr 1 An
This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD Panasonic MA3J7440G Silicon epitaxial planar type For super high speed switching For small current rectification Features High density mounting is possible Forward current Average If av gt 200 mA rectification is possible Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Reverse voltage v R 30 V Repetitive peak reverse
This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD Panasonic MA3J745EG Silicon epitaxial planar type For high speed switching For wave detection Package Features Code Two elements are contained in one package allowing highdensity SMini3 F2 mounting Pin Name Low forward voltage V F optimum for low voltage rectification j Amjde 1 Optimum for high frequency rectification because of its short 2
This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD Panasonic MA3X704 MA704 MA3X704A MA704A Silicon epitaxial planar type For switching For wave detection Features Low forward voltage V F and good wave detection efficiency r Small temperature coefficient of forward characteristic Small reverse current I R Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Reverse voltage MA3
This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD Panasonic MA3X716 MA716 Silicon epitaxial planar type For switching For wave detection Features Two MA3X704A MA704A is contained in one package series connection Low forward voltage V F optimum for low voltage rectification Optimum for high frequency rectification because of its short reverse recovery time t Absolute Maximum Ratings T a 25 C
This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD PsndSOIliC MA3X721 MA721 Silicon epitaxial planar type For super high speed switching For smaii current rectification Features Forward current Average If av 200 mA rectification is possible Absoiute Maximum Ratings Ta 25 C Parameter Symbol Rating Unit Reverse voltage Vr 30 V Maximum peak reverse voltage RM 30 V Forward current Ip
This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD Panasonic MA3X727 MA727 Silicon epitaxial planar type For super high speed switching For small current rectification Features Reverse voltage V R 50 V is guaranteed Forward current Average Ip AV 200 mA rectification is possible Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Reverse voltage v R 50 V Repetitive peak r
This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD PsndSOIliC MA3XD21 Silicon epitaxial planar type For high frequency rectification Features Forward current Average If av 1 A rectification is possible Low forward voltage Vp Absolute Maximum Ratings Ta 25 C Parameter Symbol Rating Unit Reverse voltage Vr 15 V Repetitive peak reverse voltage RRM 15 V Forward current Average 1
This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD Panasonic MA3Z792DG MA3Z792EG Silicon epitaxial planar type For super high speed switching For small current rectification Features Two MA3Z7920G is contained in one package Forward current Average Ip AV 100 mA rectification is possible Optimum for high frequency rectification because of its short reverse recovery time t rr Low forward voltage V F and
This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD Panasonic MA3Z792DG MA3Z792EG Silicon epitaxial planar type For super high speed switching For small current rectification Features Two MA3Z7920G is contained in one package Forward current Average Ip AV 100 mA rectification is possible Optimum for high frequency rectification because of its short reverse recovery time t rr Low forward voltage V F and
This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD Panasonic MA3Z7930G Silicon epitaxial planar type For super high speed switching For small current rectification Features Two MA3Z792 MA792 is contained in one package series con nection Ip AV 100 mA rectification is possible Optimum for high frequency rectification because of its short reverse recovery time t rr Low forward voltage V F and goo
This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD Panasonic MA4ZD030G Silicon epitaxial planar type For high speed switching For small type power supply For DC DC converter Features Two isolated elements are contained in one package allowing high density mounting Ip 100 mA rectification is possible Optimum for high frequency rectification because of its short re verse recovery time t Packag
This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD Panasonic MA6J786Y Silicon epitaxial planar type For high speed switching circuits Overview MA6J786Y is optimal for general circuit supplies The assembly of 3 MA3X786 elements in parallel in one package Features Forward current Average Ip AV 100 mA rectification is possible Short reverse recovery time optimum for high frequency rectification
This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD Panasonic MA27D270G Silicon epitaxial planar type For super high speed switching Features Small reverse current I R Optimum for high frequency rectification because of its short reverse recovery time t rr SSS Mini type 2 pin package Package Code SSSMini2 F3 Pin Name 1 Anode 2 Cathode Absolute Maximum Ratings T a 25 C Param
This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD Panasonic MA3J7440G Silicon epitaxial planar type For super high speed switching For small current rectification Features High density mounting is possible Forward current Average If av gt 200 mA rectification is possible Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Reverse voltage v R 30 V Repetitive peak reverse
This product complies with the RoHS Directive EU 2002 95 EC Panasonic Switching Diodes MA2S101 Silicon epitaxial planar type For switching circuits Features High breakdown voltage V R 250 V Small terminal capacitance C t Suitable for high density mounting Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Reverse voltage v R 250 V Repetitive peak reverse voltage Vrrm 250 V Forward current If 100
This product complies with the RoHS Directive EU 2002 95 EC Panasonic Switching Diodes MA2Z001 Silicon epitaxial planar type For switching circuits Features High breakdown voltage V R 200 V Small terminal capacitance C t Suitable for high density mounting Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Reverse voltage v R 200 V Repetitive peak reverse voltage Vrrm 250 V Forward current Average
Switching Diodes This product complies with RoHS Directive EU 2002 95 EC Panasonic MA36132E Silicon epitaxial planar type For high speed switching circuits Features Two elements are contained in one package optimum for high density mounting Short reverse recovery time Small terminal capacitance C t Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Reverse voltage Vr 80 V Maximum peak reverse voltage Vrm
This product complies with the RoHS Directive EU 2002 95 EC Switching Diodes Panasonic MA3J142AG MA3J142KG Silicon epitaxial planar type For switching circuits Features Allowing high density mounting Short reverse recovery time t rr Small terminal capacitance C t Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Reverse voltage v R 80 V Maximum peak reverse voltage Vrm 80 V Forward current If 100 m
This product complies with the RoHS Directive EU 2002 95 EC Switching Diodes Panasonic MA3J142AG MA3J142KG Silicon epitaxial planar type For switching circuits Features Allowing high density mounting Short reverse recovery time t rr Small terminal capacitance C t Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Reverse voltage v R 80 V Maximum peak reverse voltage Vrm 80 V Forward current If 100 m
This product complies with the RoHS Directive EU 2002 95 EC Panasonic Switching Diodes MA3X153 MAI 53 MA3X153A MA153A Silicon epitaxial planar type For switching circuits Features Small terminal capacitance C t Two diodes are connected in series in the package Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Reverse voltage MA3X153 V R 40 V MA3X153A 80 Maximum peak reverse voltage MA3X153 Vrm 40
This product complies with the RoHS Directive EU 2002 95 EC Panasonic Switching Diodes MA4X174 MAI 74 Silicon planar type For small power rectification and surge absorption Features Two isolated elements contained in one package allowing high density mounting High breakdown voltage V R 200 V Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Reverse voltage Vr 200 V Repetitive peak reverse voltage Vrrm 250
This product complies with the RoHS Directive EU 2002 95 EC Panasonic Switching Diodes MA6X128 MA 128 Silicon epitaxial planar type For switching circuits Features Four isolated elements contained in one package allowing high density mounting Centrosymmetrical wiring allowing to free from the taping direction The mirror image wiring of MA6X123 MA123 Short reverse recovery time Cj Small terminal capacitance High breakdown vo
This product complies with the RoHS Directive EU 2002 95 EC Zener Diodes Panasonic MALS068X Silicon planar type For constant voltage and surge absorption circuits Features Bi directional and high electrostatic discharge ESD Small terminal capacitance C t Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Repetitive peak forward current 4rm 200 mA Total power dissipation P t 150 mW Junction temperature T
Zener Diodes This product complies with the RoHS Directive EU 2002 95 EC Panasonic MAYS0750Y Silicon epitaxial planar type For ESD protection of high speed signal line Features Maintain signal cobs with low insertion loss distortion Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Total power dissipation Pt 150 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to 150 C Electrostatic d
Zener Diodes This product complies with RoHS Directive EU 2002 95 EC Panasonic MAZ8xxxG Series Silicon planar type For stabilization of power supply Features Extremely low noise voltage caused from the diode 2 4 V to 39V 1 3 to 1 10 of our conventional MAZ3xxx series Extremely good rising performance in the low current range Easy to select the optimum diode because of their finely divided zener voltage ranks Guaranteed reliability equiva
Zener Diodes This product complies with the RoHS Directive EU 2002 95 EC Panasonic MAZQxxx Series Silicon planar type For constant voltage constant current waveform clipper and surge absorption circuit Features Optimum for high density mounting Low noise type Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Repetitive peak forward current Ifrm 200 mA Total power dissipation Pj 120 mW Junction temperatu
Zener Diodes Panasonic MAZSxxx Series Silicon planar type For constant voltage constant current waveform clip per and surge absorption circuit Features SS Mini type 2 pin package SSMini2 Fl Low noise type V z rank classified V z 2 4 V to 39 V Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Repetitive peak forward current Ifrm 200 mA Total power dissipation Plot 150 mW Junction temperature T
This product complies with the RoHS Directive EU 2002 95 EC Zener Diodes PdlldSOIliC MAZSxxxG Series Silicon planar type For constant voltage constant current waveform clip per and surge absorption circuit Features Package Low noise type Code V z rank classified V z 2 4 V to 39 V SSMini2 F4 Pin Name 1 Anode 2 Cathode Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Marking Symbol Repetitive peak for